EA-HFCVD沉积纳米金刚石膜的光致发光分析(英文)  

Photoluminescence Analysis of Nanocrystalline Diamond Films Deposited by EA-HFCVD

作　　者：祝雪丰[1] 王林军[1] 胡广[1] 刘健敏[1] 黄健[1] 徐金勇[1] 夏义本[1] 

机构地区：[1]上海大学材料科学与工程学院,上海200072

出　　处：《液晶与显示》2007年第5期529-534,共6页Chinese Journal of Liquid Crystals and Displays

基　　金：Supported by National Natural Science Foundation of China (No .60577040) ;Shanghai Foundation of Applied Ma-terials Research and Development ( No .0404) ;Nano-technology Project of Shanghai ( No .0452nm051 , No .0552nm046) ;Shanghai Leading Academic Disciplines (No .T0101)

摘　　要：采用电子辅助-热丝化学气相沉积法(EA-HFCVD)在硅片上沉积出晶粒尺寸为30nm的均匀金刚石膜。生长过程中,预先加6A偏流生长1h,然后在0.8kPa条件下,无偏流生长3h。光致发光谱中存在4个发光中心分别位于1.682eV,1,564eV,1,518eV和1.512eV的发光峰。1.682eV处发光峰源于衬底硅原子掺杂于膜中引起的缺陷;其他发光峰源于金刚石晶格振动声子。光致发光强度越大对应的缺陷密度越大,从而降低了场发射域值电场强度,其关键可能源于金刚石膜电导型晶界。Nano-crystalline diamond films with a grain size of 30 nm were deposited on pretreated Si wafer surface via electroh assisted-hot filament chemical vapor deposition method with a bias current of 6 A applied for 1 h, followed with no bias current for 3 h at 0.8 kPa gas pressure. A photoluminescence （PL） study was carried out by Raman spectrometer in the wavelength range of 700-900 nm. Four emission bands centered at 1. 682 eV, 1. 564 eV, 1. 518 eV and 1. 512 eV were observed. The 1. 682 eV feature was attributed to the silicon impurity from the substrate, the 1. 564 eV feature to the local vibration mode of the defect, and the others bands to diamond lattice phonons. The higher the PL intensity is, the more the defects have and the lower the threshold field is. The key of the mechanism for this result may be due to conducting grain boundaries, which allows the field emission to be much easier.

关 键 词：光致发光 纳米金刚石膜 电子辅助-热丝化学气相沉积 

分 类 号：TN873.95[电子电信—信息与通信工程]