价电子能量/能级拓扑指数与MgB_2体系超导电性的关系  

Relationship between doping MgB2 superconductivity and valence electron average energy/energy level topological index

作　　者：张涛[1] 孙爱民[1] 王顺青[1] 黄国海[1] 

机构地区：[1]西北师范大学物理与电子工程学院,兰州730070

出　　处：《低温与超导》2007年第5期421-423,382,共4页Cryogenics and Superconductivity

摘　　要：构建了价电子平均能量/能级拓扑指数mV,计算了二硼化镁体系及掺杂二硼化镁体系的0阶拓扑指数0V,发现与超导转变温度TC之间有良好的规律性,因此文中提出以电性连接性指数0V作为掺杂二硼化镁体系超导电性的判据。Topological index m^ V of valence electron average energy/energy level was constructed. Alter calculated the zero topological index 0^V of doping MgB2 superconductors, the results show that the proposed index has fairly high correlation with the superconductive critical transition temperation Tc. It is suggested that the valence electron average energy/energy level topological index m^ V can be used as a empirical criterion for the experiment of doping MgB2.

关 键 词：价电子平均能量/能级拓扑指数0V 掺杂二硼化镁 超导电性 

分 类 号：O511.2[理学—低温物理]