Cu/Sb掺杂SnO_2纳米晶薄膜的H_2S气敏特性  

H_2S sensing property of nano-crystalline SnO_2 thin films doped with Cu and Sb

作　　者：龚树萍[1] 邱原[1,2] 周东祥[1] 

机构地区：[1]华中科技大学电子科学与技术系 [2]三星半导体(中国)研究开发有限公司,江苏苏州215021

出　　处：《电子元件与材料》2007年第11期4-7,共4页Electronic Components And Materials

基　　金：国家"863"计划资助项目(2004AA32G090);武汉市科技攻关计划资助项目(20041003068)

摘　　要：以SnCl2·2H2O、CuCl2·2H2O、SbCl3和无水乙醇为原料,采用sol-gel浸渍提拉法(sol-geldip-coatingmethod,SGDC)制备了纳米晶气敏薄膜。在多个工作温度和气体浓度下测试了薄膜对H2S的气敏特性。结果表明:r(Cu:Sb:Sn)为1:5:100,工作温度为140℃时,薄膜对H2S有很好的灵敏度和选择性,敏感浓度下限可达0.7×10–6。The nano-crystalline SnO2 thin films doped with antimony and copper were prepared by the sol-gel dip-coating method, using stannous chloride, copper chloride, antimony trichloride and absolute ethanol as the starting materials. The gas sensitivity of thin films was tested and compared at different working temperature and in different H2S gas concentration. The films With proper mole ratio （Cu：Sb：Sn=1：5：100） show good selectivity and sensitivity to H2S at 140 ℃, and have acceptable sensitivity with a detection limit of 0.7×10^-6.

关 键 词：电子技术 sol—gel法 SNO2纳米晶 薄膜 气敏传感器 

分 类 号：TN304.92[电子电信—物理电子学]