化学气相沉积法中SnO_2一维纳米结构的控制生长  

Controllable preparation of SnO_2 one-dimensional nanostructures by chemical vapor deposition

作　　者：曾春来[1] 唐东升[1] 刘星辉[1] 海阔[1] 羊亿[1] 袁华军[1] 解思深[2] 

机构地区：[1]量子结构与调控教育部重点实验室,湖南师范大学物理与信息科学学院,长沙410081 [2]中国科学院物理研究所,北京100080

出　　处：《物理学报》2007年第11期6531-6536,共6页Acta Physica Sinica

基　　金：国家自然科学基金重大研究计划(批准号:90606010);湖南省教育厅青年项目(批准号:05B040)资助的课题.~~

摘　　要：以Sn和SnO为源材料,化学气相沉积法中通过控制反应物配比及载气中的氧含量等宏观实验条件,实现了SnO2一维纳米结构的控制生长,成功获得各种不同横向尺度的SnO2纳米线、纳米带以及直径连续变化的针状纳米结构.通过扫描电子显微镜、X射线衍射仪对不同实验条件下所制备的样品进行形貌和晶格结构表征,认为高温生长点附近锡与氧的相对含量是控制SnO2一维纳米结构生长的关键因素;并在此基础上对SnO2一维纳米结构的生长机理进行了深入的讨论.　Using Sn and SnO powder as source material,SnO2 one-dimensional nanostructures（nanowires,nanorods,nanobelt and nanoneedles）with controllable diameters were successfully prepared by chemical vapor deposition.The nanostructure and morphology of the products depend strongly on the proportion of oxygen in the growth chamber,which can be altered by adjusting the proportion of SnO in the source material or the proportion of oxygen in the carrier gas.It is crucial to adjust the relative contents of Sn and O atoms in the region of high temperature growth of the Si wafer during controlled preparation of SnO2 one-dimensional nanostructures.We will also discuss the growth mechanism of SnO2 one-dimensional nanostructures under different growth conditions.

关 键 词：二氧化锡 纳米线 针状纳米结构 化学气相沉积法(CVD) 

分 类 号：TN304.055[电子电信—物理电子学]