发光纳米硅/二氧化硅多层膜的特性与氢气氛退火的影响  

Characteristics of luminescent nc-Si/SiO_2 multilayers and the influence of annealing in hydrogen

作　　者：夏正月[1] 韩培高[1] 韦德远[1] 陈德媛[1] 徐骏[1] 马忠元[1] 黄信凡[1] 陈坤基[1] 

机构地区：[1]南京大学物理系固体微结构物理国家重点实验室,南京210093

出　　处：《物理学报》2007年第11期6691-6694,共4页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:90301009;60425414);国家重大基础研究计划(批准号:2007CB613401);江苏省自然科学基金(批准号:BK2006715)资助的课题.~~

摘　　要：利用等离子体增强化学气相沉积法制备了氢化非晶硅/二氧化硅多层膜,通过两步热退火的方法获得了尺寸可控的纳米硅/二氧化硅多层结构,晶粒尺寸约为4nm,在室温下观察到了较强的光致可见发光,其发光峰位于750nm.在此基础上,发现合适的氢气氛退火能有效地提高材料的发光强度.电子顺磁共振实验表明氢气氛退火有效地降低了纳米硅中的非辐射复合中心而导致发光效率的提高.　Plasma enhanced chemical vapor deposition（PECVD）was used to prepare a-Si：H/SiO2 multilayers.Two-step thermal annealing was then used to transform them into nc-Si/SiO2 multilayers.The size of formed nc-Si（about 4nm）can be controlled and room temperature visible photoluminescence was observed from the annealed samples with the peak located at 750nm.Moreover,we found that annealing in hydrogen can enhance the PL intensity of the materials.The electron paramagnetism resonance（EPR）suggested that annealing in hydrogen atmospheye effectively reduces the nonradiative recombination sites existing in the nc-Si and results in the enhancement of the luminescence efficiency.

关 键 词：纳米结构 光学性质 复合 

分 类 号：O484[理学—固体物理]