纳/微米ZnO同质结器件的制备及电子学特性研究  

Fabrication and Electrical Characteristics of Nano/Micro ZnO Homojunction Devices

作　　者：曹璐[1] 李梦轲[1] 魏强[1] 张威[1] 

机构地区：[1]辽宁师范大学物理与电子技术学院,辽宁大连116029

出　　处：《微纳电子技术》2007年第11期985-988,1003,共5页Micronanoelectronic Technology

基　　金：中国博士后基金资助项目(G2000068306);辽宁省教育厅资助项目(90201038)

摘　　要：用低压化学气相沉积法制备了T形和V形纳/微米ZnO同质结,用扫描电子显微镜(SEM)和高倍光学成像显微镜观察了同质结的结构与生长形貌,分析了其结构及生长机理。利用ZnO同质结组装成了纳/微米ZnO同质结器件,分析研究了这些器件的I-V特性,并对I-V特性变化规律进行了分析讨论。T and V-shaped vapor deposition method. nano/micro ZnO homojunctions were prepared using low-pressure chemical The microstructure and growth topography of these homojunctions were observed by scanning electron microscopy and high- magnification optic microscope, and their structures and the growth mechanisms were analyzed. The nano/micro ZnO homojunction devices were fabricated using ZnO homojunctions. The electrical properties of these devices were examined by I-V measurement at room temperature ar,d the causation of I-V characteristics in these synthesized devices were discussed.

关 键 词：ZnO同质结 器件 电子学特性 

分 类 号：TN304.21[电子电信—物理电子学] TN31