半导体断路开关SOS效应测试研究  

Research on Testing of Semiconductor Opening Switch Effect

作　　者：刘玉华[1] 余岳辉[1] 梁琳[1] 

机构地区：[1]华中科技大学,湖北武汉430074

出　　处：《电力电子技术》2007年第1期122-124,共3页Power Electronics

摘　　要：基于SOS效应工作的半导体断路开关可以在纳秒级时间内关断大密度电流,因此可应用于电感储能的脉冲功率发生器。介绍了基于SOS断路开关的脉冲功率发生器结构和运行原理、SOS工作原理及典型的电流、电压波形。在简化的测试电路上对特制二极管和快恢复二极管进行了SOS效应测试实验,研究了两类二极管的反向过电压、泵浦条件和负载影响。结果表明,深扩散p基区的二极管可以产生SOS效应;泵浦条件是影响SOS特性的最主要因素,泵浦电压越高,所产生的反向过电压系数越高。Based on Semiconductor Opening Switch （SOS） effect, the SOS can switch off current of great density within nanoseconds,which is applied to pulse power generator of inductive energy storage.This paper introduces the structure and working principle of pulse power generator based on SOS, the principle and the typical current and voltage waveforms of SOS.An experimental circuit is developed to measure the SOS characteristics of special diodes and fast recovery diodes.The parameters of the two kinds of diodes ,such as reverse voltage,pumping condition and load ,are studied experimentally.The experimental results show that the SOS effect appears in the diodes with long p-base region.The pumping condition is one of the most important influence factors for SOS characteristics.The higher the pumping voltage is,the higher the reverse over-voltage coefficient is.

关 键 词：二极管 半导体 开关 脉冲发生器/半导体断路开关 

分 类 号：TN31[电子电信—物理电子学]