半导体RSD开关预充电路设计与研究  

High Power Reversely Switching Dynistor with a Thyristor Trigger Circuit

作　　者：王海洋[1] 何小平[1] 徐燕[1] 汤俊萍[1] 

机构地区：[1]西北核技术研究所,陕西西安710024

出　　处：《电力电子技术》2007年第2期35-37,共3页Power Electronics

摘　　要：利用快速晶闸管设计了一种可用于触发大电流半导体开关的反向导通型双晶复合晶体管(Reversely Switching Dynistor,简称RSD)电路。重点介绍了RSD预充电路参数选择和触发脉冲产生电路的设计,解决了预充电路和主回路RSD开关开通后各电气参数的配合问题。实验结果表明,当预充电路的工作电压约为800V时,RSD开关的预充峰值电流约为600A,脉冲宽度约为2μs,流过RSD开关的脉冲峰值电流可达5.3kA,脉冲宽度约为10μs。This article describes the design and performance of trigger circuit for drivering high power reversely switching dynistor（RSD）.The RSD switch is triggered by the current,which is formed using parallel trigger thyristor circuits and low-power shunting capacitors.The experimental results of a 52mm diameter high-voltage RSD switch shows the regime of 5.3 kA peak current and 10s pulse width with a 600A,2μs reverse current pulse at working voltage 800V.

关 键 词：半导体 开关 晶闸管 触发/反向导通型双晶复合晶体管 

分 类 号：TN344[电子电信—物理电子学]