DMCPS/CHF_3制备的F-SiCOH低k薄膜结构与沉积速率研究  

Investigation on the Filrn Structure and Deposition Rate of Low k F-SiCOH Film Prepared by DMCPS/CHF_3

作　　者：王婷婷[1] 

机构地区：[1]苏州市职业大学教师教育系,江苏苏州215104

出　　处：《西华大学学报（自然科学版）》2007年第6期48-51,共4页Journal of Xihua University:Natural Science Edition

基　　金：国家自然科学基金(No10575074);苏州大学薄膜材料江苏省重点实验室资助的课题(No10575074)

摘　　要：以十甲基环五硅氧烷(DMCPS)和三氟甲烷(CHF3)作为反应气体,采用电子回旋共振等离子体化学气相沉积(ECR-CVD)方法,制备了氟掺杂的SiCOH低介电常数薄膜。研究发现:随着CHF3/DMCPS流量比的增大,薄膜的沉积速率呈"N"型变化。根据薄膜结构和成分的傅立叶变换红外光谱仪(FTIR)、X射线光电子能谱(XPS)以及放电等离子体中基团分步的光强度标定的发射光谱(OES)分析可知:薄膜沉积速率的变化是由于CHF3进气量的增加导致薄膜生长从以沉积F-SiCOH薄膜为主过渡到以沉积氟化非晶碳(a-C:F:H)薄膜为主的结果。F-SiCOH films were prepared in electron cyclotron resonance chemical vapor deposition (ECR-CVD) system using DMCPS/CHF3 mixture. It was found that the deposition rate changed as an 'N' shape with the increase of CHF3/DMCPS flow rate ratio. According to the analysis of the film structures and compositions using FTIR and XPS, and the analysis of the radical distributions in the plasma from OES, it is inferred that this change indicates the transition from F-SiCOH film deposition to a-C:F:H film growth.

关 键 词：低介电常数 SiCOH薄膜 氟掺杂 

分 类 号：O484.1[理学—固体物理]