计算半导体平板微腔自发发射的近似方法  

Approximation on Calculation of Spontaneous Emission of Semiconductor Planar Micro-cavities

作　　者：赵红东[1] 孙梅[1] 韩力英[1] 田红丽[1] 郭东太[1] 刘赫[1] 

机构地区：[1]河北工业大学信息工程学院,天津300130

出　　处：《计算物理》2007年第6期745-748,共4页Chinese Journal of Computational Physics

基　　金：光电信息技术科学教育部重点实验室开放课题(天津大学区);河北省自然科学基金(F2007000096)资助项目

摘　　要：引入新变量,并利用高阶泰勒展开完成半导体平板微腔自发发射的空间积分,由此得到半导体平板微腔TE模式自发发射的近似表达式.在腔长为半个中心波长和高反射率腔面的半导体平板微腔中,结合电子和空穴的费米分布函数,用近似方法计算垂直方向小角度内自发发射谱和总的自发发射谱,分别与数值空间积分基本相同,可以用于计算量子阱平板微腔自发发射谱.The spontaneous emission spectra of semiconductor planar micro-cavities are calculated by Taylor series with high order and new variable. An approximation of spontaneous emission with TE mode in a planar micro-cavity with half wavelength and high reflectivity is obtained. In the planar semiconductor micro-cavities, combined with Fermi-Dirac distribution functions of electrons and holes, the spontaneous emission spectra in a small angle and all directions calculated are agree well with those by numerical integral. The approximation can be used to the spontaneous emission spectra in QW（quantum well） planar micro-cavities.

关 键 词：半导体平板微腔 自发发射 近似方法 

分 类 号：TN248[电子电信—物理电子学]