激光辅助刻蚀硅锗合金样品生成低维片状结构的PL发光  

PL Emission in Flaky Structures of SiGe Alloys Etched Under Laser Irradiation

作　　者：王海旭 金锋 黄伟其 张寿乾 张立 冯扬 郭杨 杨贵洪 

机构地区：[1]贵州光电子技术与应用重点实验室,贵州贵阳550025

出　　处：《贵州大学学报（自然科学版）》2007年第6期587-590,共4页Journal of Guizhou University:Natural Sciences

基　　金：国家自然科学基金资助项目(10547006);贵州大学SRT项目

摘　　要：我们用激光辐照辅助电化学刻蚀法在硅锗合金上形成了多种氧化低维纳米结构,特别是硅锗合金薄膜裂解后生成条形片状结构,其条形片表面有纳米颗粒分布。发现这些纳米颗粒经空气氧化后在波长为760nm和866nm处有较强的光致荧光(PL)峰,高温退火后其PL峰(643nm和678nm)有明显的蓝移。实验结果支持量子受限(QC)发光模型。该项工作为制备硅和锗的强发光材料提供了新的方法。Some kinds of low-dimensional flaky nanostructures can be formed by etching under irradiation of laser on the SiGe alloy sample. We have studied the photoluminescence （PL） of flaky structures of SiGe alloys where the intensive PL peaks occur at 760nm and 866nm. After annealing, the PL emission has blue-shift obviously whose peaks are at 643nm and 678nm wavelength. There are much more Si- nanocrystals and Ge-nanocrystals on the surface of the structure. The results of the experiment could be interpreted by quantum confinement model.

关 键 词：低维纳米结构 光致荧光 量子受限 

分 类 号：TN249[电子电信—物理电子学]