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机构地区:[1]武汉理工大学材料科学与工程学院,湖北武汉430070 [2]长飞光纤光缆有限公司,湖北武汉430070
出 处:《功能材料》2007年第A01期330-333,共4页Journal of Functional Materials
摘 要:对PCVD法制备的纯硅芯、掺氟硅芯、掺锗硅芯以及氟锗共掺硅芯光纤预制棒的芯区进行了紫外吸收谱测试,并考察了248nm紫外激光辐照及热处理后紫外吸收谱的变化。结果表明,纯硅芯深紫外区的强吸收尾部延伸至紫外波段,掺氟后使深紫外段的吸收限向短波方向移动,从而降低了其对紫外波段的影响,辐照后纯硅芯的紫外吸收增加而掺氟硅芯的吸收出现下降。掺锗硅芯、氟锗共掺硅芯中均在240nm附近出现了氧不足锗缺陷(GODC)引起的吸收峰,但后者吸收峰强度明显低于前者,因为氟能与GODC发生反应从而降低了GODC浓度,且氟同时还能愈合GeE’,辐照后氟锗共掺硅芯的吸收改变程度也要低于掺锗硅芯,表明掺氟能降低掺锗硅芯的紫外吸收。Pure silica core,F-doped silica core,GeO2-doped silica core and F-GeO2 codoped silica core fiber performs prepared by PCVD were investigated by ultraviolet absorption spectroscopy. The ultraviolet absorption characteristics of these performs were also studied after UV laser irradiation and heating treatment. It was found that absorption band tail in deep u.v. had expand to uv regions, but that effect had been weakened by F, which made the absorption band in deep u.v. shift toward wavelengths shorter than that of pure silica core. Absorption band near 240nm assigned to GODC were found both in GeO2-doped silica core and F-GeO2 codoped silica core, but absorption intensity of the latter were lower than that of the former. It's because F can react with GODC and GeE' simultaneously and reduce their concentration. After irradiation, u.v. absorption change of F-GeO2 codoped silica core was weaker than that of GeO2-doped silica core, it thus gave that introduction of F could depress the u.v. absorption of GeO2-doped silica core effectively.
分 类 号:TN929.1[电子电信—通信与信息系统] TQ171.77[电子电信—信息与通信工程]
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