纳米TiO2薄膜微阵列电极的制备与紫外光电阻特性表征  

Preparation of microarray electrode of nano Ti02 film and resistance measurement

作　　者：林志东[1,2] 吕进玉[2] 曾文[2] 

机构地区：[1]兰州理工大学甘肃省有色金属新材料省部共建国家重点实验室,甘肃兰州730050 [2]武汉工程大学材料科学与工程学院,湖北武汉430073

出　　处：《功能材料》2007年第A01期364-366,共3页Journal of Functional Materials

基　　金：基金项目：甘肃省有色金属新材料重点实验室开放基金资助项目（SKL05004）

摘　　要：采用溶胶凝胶法在叉指型微阵列电极表面制备了TiO2纳米薄膜，并对薄膜形貌、厚度以及溶胶粒子尺寸进行了表征，研究了温度、紫外光照对纳米TiO2薄膜微阵列电极的电阻的影响。结果表明，溶胶粒子平均粒径在9nm，单次提拉制备的TiO2纳米薄膜膜厚为120nm，两次提拉薄膜厚度200nm，纳米TiO2薄膜微阵列电极电阻呈现半导体特性，大气环境中，紫外光照下纳米薄膜微电极的低温电阻较无光照时明显减小，表现出紫外光敏感特性。随着温度的升高，紫外光照下的电阻与无光照时电阻差值逐步减小，表明温度对纳米薄膜电阻有更大的影响。Microarray electrodes covered with nano TiO2 film were prepared by sol-gel, the morphology and thickness of the films, the size of sol particles were characterized, and the resistance of the electrodes was measured in air. The result show that t he average size of particles was 9 nm, the thickness of the film was 120 nm by once coating, 200 nm by twice coating. The resistance of microarray electrode covered with nano TiO2 film shows character of semiconductors. When the microarray electrodes were exposed to UV light in air, the resistance of electrodes was decrease at low temperature, which show the sensitivity of UV light. The resistance differences between irradiated by UV light and no irradiation were reduced while the temperature was increased.

关 键 词：TiO2纳米薄膜 微阵列电极 紫外光照 电阻 

分 类 号：TB383[一般工业技术—材料科学与工程] TN304.91[电子电信—物理电子学]