In掺杂对CdMnTe晶体性能的影响  

Effects of In doping on the properties of CdMnTe single crystal

作　　者：张继军[1] 王领航[1] 王涛[1] 曾冬梅[1] 介万奇[1] 

机构地区：[1]西北工业大学材料科学与工程学院,陕西西安710072

出　　处：《功能材料》2007年第A03期1030-1033,共4页Journal of Functional Materials

基　　金：国家自然科学基金重点资助项目（50336040）.

摘　　要：采用垂直Bridgman法生长了In掺杂Cd0.3Mn0.2Te晶体（CdMnTe：In）和本征的Cd0.8Mn0.2Te晶体（CdMnTe）。X射线粉末衍射、X射线双晶摇摆曲线和位错密度测试表明，所生长晶体均为立方闪锌矿结构，半峰宽为40～80arc Sec，位错密度为100～100cm^-2，结晶质量良好．In掺杂不影响晶体的结构和结晶质量。电流．电压（I-V）测试表明，CdMnTe：In晶体的电阻率为1～3×10^9Ω·cm，与CdMnTe晶体相比上升了3个数量级．近红外光透过光谱（IR transmission）研究发现In掺杂后CdMnTe晶体红外透过率降低，在波数范围4000～1000cm^-1，CdMnTe晶体红外透过率为51．2％～56．4％，而CdMnTe：In的红外透光率为15．4％～6％。Adopting vertical Bridgman method, an Indium （In） doped Cd0.8Mn0.2Te （CdMnTe： In） ingot and an intrinsic Cd0.8Mn0.2Te （CdMnTe） were grown. The crystalline structure and quality of the two ingots were verified by X-ray diffraction, double-crystal rocking curve measurement and etch pits density （EPD）. The results showed a pure cubic zinc blende structure with the FWHM of 40～80 arc sec and EPD of I04～ 10s cm-2, which mean the as-grown ingots are with high crystalline perfection and the In dopant has no effect on the crystal structure. Current-voltage measurement shows that CdMnTe：In has the resistivity 1～3×10^9Ω·cm, which is three orders higher than that of undoped CdMnTe. IR transmission measurement exhibits that in the wavenumber range of 4000～ 1000 cm^-1 the IR transmittance of CdMnTe：In and CdMnTe is in between 15.4%～21.6% and 51.2%～56.4% respectively, indicating that In-doping results in a remarkable reduction of IR transmittance of CdMnTe crystal.

关 键 词：CDMNTE In掺杂 X射线衍射 电阻率 红外透过率 

分 类 号：TN304.2[电子电信—物理电子学]