应力生长FeCoSiB非晶薄膜的磁各向异性研究  

Study on the magnetic anisotropy of FeCoSiB amorphous films prepared by strain growth method

作　　者：彭斌[1] 张万里[1] 汤如俊[1] 蒋洪川[1] 兰中文[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《功能材料》2007年第A03期1111-1113,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目（50501004）.

摘　　要：采用应力生长方法，制备出受压应力和张应力作用的FeCoSiB非晶磁弹性薄膜，研究了薄膜中的应变大小对FeCoSiB薄膜的磁滞回线、剩磁、应力诱导各向异性场等磁特性的影响．结果表明，无应变薄膜在薄膜面内呈现各向同性，而有应变的薄膜呈现出明显的各向异性。张应力诱导的各向异性与应力方向平行，而压应力形成垂直于应力方向的磁各向异性。各向异性场随应变的增大而线性增大。FeCoSiB amorphous magnetoelastic films under tensile or compressive stress were prepared by strain growth method. The influences of the stress on the magnetic hysteresis, remanence and anisotropic field have been investigated. The results show that the unstressed sample is magnetic isotropy in the film plane while strong magnetic anisotropy has been observed in the stressed samples. The magnetic anisotropy induced by the tensile stress is parallel to the applied stress while the magnetic anisotropy induced by the compressive stress is perpendicular to the applied stress. It has also been found that the induced anisotropic field increases with the increase of the strain.

关 键 词：FeCoSiB 非晶磁弹性薄膜 应力 磁各向异性 

分 类 号：TM271[一般工业技术—材料科学与工程]