射频反应溅射中N2分量对TiN薄膜性质的影响  

Influence of nitrogen partial pressure on TiN films grown by RF reactive sputtering

作　　者：刘逆霜[1,2] 方国家[1,2] 王明军[1] 艾磊[1] 赵兴中[1] 

机构地区：[1]武汉大学声光材料与器件教育部重点实验室,湖北武汉430072 [2]中国科学院传感技术国家联合重点实验室,上海200050

出　　处：《功能材料》2007年第A06期2346-2347,共2页Journal of Functional Materials

基　　金：基金项目：湖北省自然科学基金资助项目（2006ABA215）

摘　　要：用射频反应溅射的方法制备了TiN薄膜，其晶体结构与电阻率都与溅射气氛中N2分量有直接关系。随着N2分量由5％增加到50％，薄膜先是呈现（111）的择优取向，后是呈现（200）的取向，最后没有衍射峰出现，结构趋于无定型，于此同时，电阻率也由接近金属的良好导电性变为半导体的导电性。Titanium nitride film has been grown on glass substrate by RF reactive sputtering with a mixture of high purity argon and nitrogen used as sputtering and reactive gases, respectively. The morphology of the films grown at different nitrogen partial pressure, has been studied with X-ray diffraction （XRD）. It is found that nitrogen partial pressure has significantly effect on the microstructures and resistivity of the films. As N2 partial pressure increases from 5% to 50% the δ-TiN （111） was first observed, showing the preferential growth orientations of the grains; then δ-TiN （200） can be seen; and finally, the film became amorphous. At the same time, the resistivity of the films varied from metallic to semiconductor.

关 键 词：射频反应溅射 TIN 氮分压 电导率 

分 类 号：TQ135.1[化学工程—无机化工]