正向电压及氧化时间对ZAlSi12微弧氧化陶瓷层特性的影响  

Effect of forward voltage and oxidation time on characteristics of micro-oxidation film of ZAlSi12

作　　者：吕凯[1] 刘向东[1] 池波[1] 张雅萍[1] 张静[1] 刘晓丽[1] 乌迪[1] 

机构地区：[1]内蒙古工业大学材料科学与工程学院,内蒙古呼和浩特010051

出　　处：《功能材料》2007年第A10期4081-4083,共3页Journal of Functional Materials

基　　金：内蒙古科技攻关资助项目（20040202）

摘　　要：ZAlSi12因为含Si量高，其微弧氧化过程不同于其它铸造铝合金。铸铝合金中si的存在不利于在其表面进行微弧氧化。因此，研究正向电压、氧化时间对ZAlSi12微孤氧化陶瓷层特性的影响规律，对于获得良好的陶瓷表面层有着重要的意义。研究了不同的正向电压及氧化时间对ZAlSi12微弧氧化陶瓷层厚度的影响规律，并对膜层进行了磨损试验。采用XRD分析陶瓷层的相组成。研究结果显示，电压为440V／120V时，陶瓷层性能最佳，膜层厚度达169μm。氧化时间为0～48min时，膜层生长速度快，超过48min后，生长缓慢。因此，适宜的氧化时间为48min。The micro-oxidation process of ZAlSi12 is different from other cast aluminum alloys due to high silicon content in its substrate. Silicon contained in aluminum alloy is disadvantageous to the process of micro-oxidation on its surface. In order to obtain an excellent ceramic coating, it is important to investigate effects of forward vOltage and oxidation time on characteristics of micro-oxidation film of ZAlSi12. In the present work, the effects of different voltage and oxidation time on thickness of micro-oxidation film of ZAlSi12 and the wear resistance of coating was investigated. The compositions of coatings were analyzed by XRD. The results show that a good ceramic coating with ca 169μm thickness is obtained at correct voltage 440V/120V. Ceramic coating rapidly grows as oxidation time increasing from 0 to 48 min But, excess of 48 min, coating do not grow obviously. As a result, a correct oxidation time for ZAlSi12 at 440V/120V is 48 rain.

关 键 词：ZAlSi12 微弧氧化 正向电压 氧化时间 

分 类 号：TG174.4[金属学及工艺—金属表面处理]