Surface Emitting THz Wave Parametrical Oscillator Using MgO：LiNbO3  

作　　者：张显斌 施卫 T. Ikari H. Ito 

机构地区：[1]Department of Physics, Xi'an University of Technology, Xi'an 710048 [2]Photo Dynamics Research Center, RIKEN, 519-1399 Aramaki-Aoba, Sendai 980-8577, Japan

出　　处：《Chinese Physics Letters》2007年第11期3153-3156,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 10390160, 10376025 and 60771053, and the Natural Science Foundation of Shaanxi Province under Grant No 2005A03. The authors thank C. Takyu for coating the crystal surface and T. Shoji for polishing the crystals.

摘　　要：Room-temperature operation terahertz （THz） wave source is demonstrated using three MgO：LiNbO3 crystals which have a noncollinear arrangement. The experimental results show that the THz wave can be tunable from 0.8 THz to 3.0 THz, and the peak energy output is 103 pJ/pulse at 1.5 THz. The noncoilinear cavity configuration makes the THz beam have Gaussian-like spatial distribution, small divergence angle, perpendicularly eradiated from the crystal surface. The beam quality factor M2 is measured to be Mx^2 = 1.15, Mx^2 = 1.25 for characterizing the THz wave beam. Experiments also show that the THz beam can be focused by using a polyethylene lens, and the focal spot size is close to the diffraction limit.Room-temperature operation terahertz （THz） wave source is demonstrated using three MgO：LiNbO3 crystals which have a noncollinear arrangement. The experimental results show that the THz wave can be tunable from 0.8 THz to 3.0 THz, and the peak energy output is 103 pJ/pulse at 1.5 THz. The noncoilinear cavity configuration makes the THz beam have Gaussian-like spatial distribution, small divergence angle, perpendicularly eradiated from the crystal surface. The beam quality factor M2 is measured to be Mx^2 = 1.15, Mx^2 = 1.25 for characterizing the THz wave beam. Experiments also show that the THz beam can be focused by using a polyethylene lens, and the focal spot size is close to the diffraction limit.

关 键 词：coated conductor buffer layer self-epitaxy CEO2 

分 类 号：O43[机械工程—光学工程]