Nonvolatile Memory Devices Based on Gold Nanoparticle and Poly （N-Vinylcarbazole） Composite  

作　　者：林剑 李迪 陈江山 李景虹 马东阁 

机构地区：[1]State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 [2]Graduate School of the Chinese Academy of Sciences, Beijing 100049 [3]Sate Key Laboratory of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate School of the Chinese Academy of Sciences, Changchun 130022 [4]Department of Chemistry, Tsinghua University, Beijing 100084

出　　处：《Chinese Physics Letters》2007年第11期3280-3282,共3页中国物理快报（英文版）

基　　金：Supported by the Hundreds Talents Programme of Chinese Academy of Sciences, the National Natural Science Foundation of China under Grant No 50573075, the National Science Fund for Distinguished Young Scholars of China under Grant Nos 50325312 and 20125513, and the National Basic Research Programme of China under Grant No 2002CB613403.

摘　　要：A rewritable polymer memory device based on gold nanoparticle doped poly （N-vinylcarbazole） （PVK）, which can be easily fabricated by simple spin coating, has been described. An electrical bistable phenomenon is observed in the current-voltage characteristics of this device, and it is found that the electrical bistability is repeatable by proper writing voltage and erasing voltage. The unique behaviour of the devices provides an interesting approach such that doping nanoparticles in polymer can be used to realize high performance nonvolatile polymer memory devices.A rewritable polymer memory device based on gold nanoparticle doped poly （N-vinylcarbazole） （PVK）, which can be easily fabricated by simple spin coating, has been described. An electrical bistable phenomenon is observed in the current-voltage characteristics of this device, and it is found that the electrical bistability is repeatable by proper writing voltage and erasing voltage. The unique behaviour of the devices provides an interesting approach such that doping nanoparticles in polymer can be used to realize high performance nonvolatile polymer memory devices.

关 键 词：coated conductor buffer layer self-epitaxy CEO2 

分 类 号：TB3[一般工业技术—材料科学与工程]