平面绕型对RFIC螺旋电感电性能的影响  

Influences of Planar Pattern on Performances of RFIC Spiral Inductors

作　　者：肖华清[1] 熊祥正[1] 廖成[1] 

机构地区：[1]西南交通大学电磁所,四川成都610031

出　　处：《西南交通大学学报》2007年第1期35-39,共5页Journal of Southwest Jiaotong University

基　　金：国家自然科学基金资助项目(60441006)

摘　　要：基于RF集成电路硅衬底螺旋电感(SIOS)的典型物理模型,用HFSS(High Frequency Structure Simulator)对中空平面四边形、八边形和圆形螺旋电感的电性能进行了模拟计算,结果与理论分析吻合.在内半径相同的情况下,圆形螺旋电感最大品质因数Q分别比四边形和八边形增加约0.90和0.80倍;在最大品质因数频率点,圆形螺旋电感端口反射系数分别比四边形和八边形减小约32.5%和26.6%,金属材料用量分别比四边形和八边形减少约30%和20%;当Q>5时,圆形螺旋电感的工作带宽分别比四边形和八边形增大约60%和30%.The performances of RF （radio frequency） integrated circuit （RFIC） spiral inductors on silicon （SIOS） with different planar structures were simulated based on a typical physical model using the HFSS （high frequency structure simulator）. The simulated results are well coincident with those from theoretical analysis. Compared with those of the quadrilateral and octagonal ones with the same inner radius, the maximum quality factor Q of the circular spiral inductor increases by 0.90 and 0.80 times, respectively; at the frequency corresponding to the maximum quality factor the reflection coefficient of the circular spiral inductor decreases by about 32.5% and 26.6% , respectively, and the masses of metals used decrease by about 30% and 20% , respectively; and the band width of the circular spiral inductor is about 60% and 30% wider, respectively, for Q 〉5.

关 键 词：平面绕型 RFIC 螺旋电感 品质因数 性能 散射参数 

分 类 号：TN385[电子电信—物理电子学]