WO_3/Si-NPA复合薄膜的电容湿度传感性能研究  

Investigation on capacitive humidity sensing properties of WO_3/Si-NPA composite thin film

作　　者：冯春岳[1] 肖龙[2] 董永芬[1] 李新建[1] 

机构地区：[1]郑州大学物理系材料物理教育部重点实验室,河南郑州450052 [2]河南职业技术学院机械电子工程系,河南郑州450046

出　　处：《传感器与微系统》2007年第11期57-60,64,共5页Transducer and Microsystem Technologies

基　　金：国家自然科学基金资助项目(10574112)

摘　　要：制备了基于硅纳米孔柱阵列（Si—NPA）的WO3／Si—NPA复合薄膜，并对其表面形貌进行了表征，研究了其电容湿度传感性能和基点电容的温度漂移。研究表明：WO3／Si—NPA继承了衬底Si-NPA规则的阵列结构的表面形貌特征，WO3的沉积形成了连续的WO3薄膜，WO3／Si—NPA是一种典型的纳米复合薄膜。室温下，WO3／Si—NPA的电容值随测试频率的增加而单调减小，但其灵敏度则在100Hz时达到最大值。在此测试频率下，当环境的相对湿度从11％RH增加到95％RH时，元件的电容增量高达16000％，显示WO3／Si-NPA对环境湿度有较高的灵敏度。同时，电容的湿度响应曲线显示出很好的线性。对其基点电容的温度稳定性研究表明：WO3／Si—NPA用作湿度传感的最佳工作温度区为15-50℃。The composite thin film of WO3/silieon nanoporous pillar array（Si-NPA） is prepared and its surface morphology is characterized. The capacitive humidity sensing properties and the capacitance temperature drift of WO3/Si-NPA are studied. It is shown that WO3/Si-NPA inherites the regular pillar array, the morphological characteristic of Si-NPA substrate, and a continuous WO3 thin film is formed to make WO3/Si-NPA a typical nanocomposite thin film. Measured at room temperature,the capacitance of WO3/Si-NPA decreases monotonically with the testing frequency, but a maximum sensitivity is achieved at the testing frequency of 100 Hz. When the relative humidity changes from 11% RH to 95 % RH,a capacitance increment is over 16 000 % is achieved. This indicates that WO3/Si-NPA is very sensitive to humidity. Furthermore, the capacitance response of WO3/Si-NPA to humidity exhibits high linearity. The research on the capacitance-temperature dependence shows that the best operation temperature zone is 15-50℃.

关 键 词：硅纳米孔柱阵列 WO3 WO3/Si—NPA 电容式湿敏元件 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]