MBE生长中波HgCdTe薄膜材料温度控制  

Temperature Control of Mid-wave HgCdTe Thin Films Grown by MBE

作　　者：李艳辉[1] 王善力[1] 宋立媛[1] 孔金丞[1] 赵俊[1] 张筱丹[1] 唐利斌[1] 姬荣斌[1] 

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2007年第2期76-78,82,共4页Infrared Technology

基　　金：国家自然科学基金资助项目(60576069);云南省自然基金资助项目(2004E0055M)

摘　　要：报道在晶格失配GaAs衬底上分子束外延CdTe缓冲层和中波HgCdTe薄膜的温度控制过程。通过红外测温仪监测样品表面温度,来改变加热功率,从而把温度控制在需要的生长温度范围。通过此方法,可以把CdTe生长时样品的表面温度控制在±5℃,MCT生长时可以达到±1℃。生长得到的样品,表面光亮,组分、厚度均匀性好,X射线双晶回摆曲线半峰宽为72 arcsec。The temperature control process of CdTe and MW HgCdTe layers grown on （211）GaAs substrate by MBE was investigated in this paper. The growth temperature was minotored by a pyrometer and can be controlled by changing the thermal power. By this method, the CdTe and MW HgCdTe growth temperature were precisely controlled within ± 5℃ and ± 1℃, respectively. High quality films which showed good uniformity of composition and thickness in a 2-inch wafer were obtained. The FWHM of X-ray double crystal rotating curve on a sample reached to 72 arcsecs.

关 键 词：HGCDTE MBE 红外测温仪 表面辐射 

分 类 号：TN213[电子电信—物理电子学]