烘烤温度对LaNiO_3薄膜微结构与电学性能的影响  

Effects of Baking Temperature on Microstructures and Electric Properties of LaNiO_3 Thin Films

作　　者：张婷[1] 武超[1] 丁玲红[1] 张伟风[1] 

机构地区：[1]河南大学物理与电子学院,河南开封475001

出　　处：《河南师范大学学报（自然科学版）》2007年第1期87-90,共4页Journal of Henan Normal University(Natural Science Edition)

基　　金：河南省高校创新人才培养工程资助(2002006)

摘　　要：采用sol-gel技术在单晶Si(100)衬底上制备了LaNiO3导电薄膜.利用X射线粉末衍射、原子力显微镜、扫描电子显微镜和四探针电阻测量法研究了不同烘烤温度对LaNiO3薄膜的晶体结构、表面形貌和导电性能的影响.结果表明,LaNiO3薄膜均为赝立方钙钛矿结构,表面致密、均匀,衬底与薄膜间界面清晰.烘烤温度为210℃时,薄膜具有最好的<110>择优取向性.烘烤温度在210℃的薄膜具有最低的电阻率,达到10-4Ω.cm数量级,导电性能最好.LaNiO3 （LNO） thin films were prepared on Si （100） substrates with various baking temperatures from 150 ℃ to 300 ℃ by sol-gel route. Their crystal structure, surface morphologles, and conductive property were experimentally investigated by using X-ray diffraction, atomic force microscopy, scanning electron microscopy, and 4-point probe method. All the LNO films crystallized into a pseudocubic perovskite phase with the dense, uniform and crack-free surfaces. We also found that the baking temperature has obvious influences on the grain orientations and resistivities of the LNO films. The LNO film showed more preferential 〈110〉-orientation at the baking temperature of 210 ℃ than at the other temperatures. The LNO film obtained at the baking temperature of 210 ℃ exhibited the smallest resistivity as low as 8.98× 10^-4 Ω · cm.

关 键 词：LANIO3 烘烤温度 择优取向 溶胶-凝胶法 导电性 

分 类 号：TB43[一般工业技术] O484[理学—固体物理]