Ga阶梯式深结分布特性与应用研究  

Investigation on Characteristics and Application of the Ladder Depth Junction Distributing of Ga

作　　者：裴素华[1] 黄萍[1] 张美娜[1] 江玉清[1] 

机构地区：[1]山东师范大学物理与电子科学学院,山东济南250014

出　　处：《稀有金属材料与工程》2007年第A03期36-39,共4页Rare Metal Materials and Engineering

基　　金：国家自然科学基金(69976019)资助项目

摘　　要：利用开管扩Ga进行低浓度掺杂-长时间结深推移-浓度补偿与再分布方法形成Ga的阶梯式深结分布,用于普通晶闸管制备。实验与理论表明:J_1和J_2结附近Ga的较小浓度梯度α_j保证器件具有较高阻断耐压特性;J_3结附近Ga的浓度平缓分布,改善了器件触发参数的分散性;P_2区内Ga较高的电导率(?)和J_3结较大的注入比,同步协调和提高了器件的通态特性与动态特性。The ladder depth junction distribution of Ga is formed by tube-open diffusion low concentration doping-long-time junction depth process-concentration compensate and redistribution doping method to prepare thyristor. The experimentation and the theories indicate that the less concentration grads αj of Ga round J1 and J2 junction ensures better interdiction withstand voltage characteristic. The concentration slowness distribution of Ga round J3 junction improves the dispersed characteristic of trigger parameter. The higher conductance -↑σ of Ga in P2 region and bigger afflux ratio of J3 junction synchronization simultaneously corresponds and improves the on-state and dynamic characteristic of the device.

关 键 词：GA 阶梯式分布 晶闸管 电学性能 

分 类 号：TN389[电子电信—物理电子学]