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作 者:韩春霞[1] 刘向东[1] 王晓军[1] 吕凯[1] 王力杰[2]
机构地区:[1]内蒙古工业大学,内蒙古呼和浩特010051 [2]中国兵器工业集团第五二研究所,内蒙古包头014034
出 处:《稀有金属材料与工程》2007年第A03期581-584,共4页Rare Metal Materials and Engineering
基 金:铝合金陶瓷气缸的开发与产业化及内蒙古科技攻关项目(20040202)
摘 要:通过控制微弧氧化时间,研究了ZA1Si12Cu2Mg1在不同氧化时间下膜层的生长过程,分析了氧化过程中正向电流密度、膜层厚度的变化。结果表明:微弧氧化阶段又分为氧化过渡阶段和氧化烧结阶段。氧化过渡阶段陶瓷层以向外生长为主;生成Al_2O_3非晶氧化物;氧化烧结阶段膜层以向内生长为主,此阶段膜层生长速率最快,生成Al_2O_3晶体和莫来石。氧化烧结阶段对陶瓷膜层的形成起重要作用,对氧化烧结阶段的控制可直接影响膜层的厚度以及膜层中Al_2O_3晶体含量。The growth of coating on the surface of ZAlSi12Cu2Mg1 by micro-arc oxidation for different oxidation time was investigated and the thickness of coating and forward current density were analyzed in the present work. The results show that the process of micro-arc oxidation contains two stages, the oxidation transition and the sintering. At the initial time of reaction, the coating grows outward from the surface of ZAlSi12Cu2Mg1 alloy substrate and it is consisted of amorphous Al2O3 by XRD analysis. At later time, the increasing of coating thickness is dominated by growing toward the inner and the coating consisted of crystal Al2O3 and mullite. In addition, the growth rate is very fast in this stage. It is found that oxidation sintering is dominated in the process and the thickness of coating and the content of crystal Al2O3 in it can be controlled by oxidation sintering time.
关 键 词:ZALSI12CU2MG1 微弧氧化 陶瓷膜层
分 类 号:TG174.451[金属学及工艺—金属表面处理]
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