直流反应磁控溅射法制备CdIn_2O_4薄膜的光电性能研究  

Optical and Electrical Properties of CdIn_2O_4 Thin Films Prepared by DC Reactive Magnetron Sputtering

作　　者：杨丰帆[1] 方亮[2] 孙建生[1] 徐勤涛[1] 吴苏友[1] 张淑芳[2] 董建新[2] 

机构地区：[1]中国兵器工业集团第五三研究所,济南250031 [2]重庆大学应用物理系

出　　处：《真空科学与技术学报》2007年第6期460-466,共7页Chinese Journal of Vacuum Science and Technology

基　　金：教育部新世纪优秀人才支持计划(No.NCET-05-0764);国防预研项目(No.40401030202)资助

摘　　要：利用直流反应磁控溅射法制备了CdIn2O4(CIO)薄膜,研究了氧浓度、基片温度、溅射时间和退火处理对薄膜光电性能的影响。结果表明:电阻率随着氧浓度的增加和溅射时间的减小而增加,随着基片温度的升高先减小后增加;透光率随着氧浓度、基片温度的增加和溅射时间的减小而增加。退火处理后,薄膜的电阻率降低,光吸收边发生"蓝移"。点缺陷对薄膜的光电性能产生重要影响,光吸收边的移动是"Burstein-Moss"效应和多体效应共同作用的结果。综合实验结果和理论研究,推荐了直流反应磁控溅射法制备CIO薄膜的最佳条件。此条件下制备薄膜的电阻率为2.95×10-4Ω.cm,波长为628 nm时薄膜的透光率高达91.7%。CdIn2O4 （CIO） thin films were grown by DC reactive magnetron sputtering. The influence of the films growth conditions, including oxygen concentration, substrate temperature, sputtering time, and annealing, etc. , On its optical and electrical properties was studied. The results show that some films growth conditions strongly affect the properties of the films. For example, its resistivity increases with an increase of oxygen concentration and a decrease of the sputtering time; but as the annealing temperature rises up, its resistivity firstly decreases and then increases. The transmission increases as oxygen concentration and substrate temperature increase and the sputtering time decreases. After annealing, its resistivity decreases and a ＂blue-shift＂ can be observed at the absorption edge. We conclude that point defects critically affect the films＇ properties, and ＂Burstein-Moss＂ and many-body effects result in the ＂blue-shift＂. Under the optimized growth conditions, we obtained the films with a resistivity of 2.95 × 10^-4 Ω·cm and a transmission up to 91.7% at a wavelength of 628 nm.

关 键 词：直流反应磁控溅射法 CdIn2O4薄膜 光电性能 最佳条件 

分 类 号：O484.4[理学—固体物理]