LD端面泵浦Cr^(4+):YAG被动调Q的Nd:YLF激光器  

Passively Q-Switched Diode-End-Pumped Nd:YLF Laser With Cr^(4+):YAG as Saturable Absorber

作　　者：王春[1] 胡文涛[1] 陈绍和[1] 邓锡铭[1] 

机构地区：[1]中国科学院上海光学精密机械研究所,上海201800

出　　处：《量子电子学报》1997年第4期359-362,共4页Chinese Journal of Quantum Electronics

摘　　要：二极管端面泵浦的Nd：YLF激光器中，采用Cr4＋：YAG作为饱和吸收体，实现了被动调Q，激光输出波长为1．053nm。在泵浦功率为最大值525mW时，输出宽度为26ns、能量为22μJ的调Q脉冲，同时对具有同样腔结构的Nd：YVO4激光器在插入C44＋：YAG饱和吸收体后的特性也作了研究，对Cr4＋：YAG被动调Q开关的工作条件作了理论上的分析，并在实验中得到极好的验证。In the Q-switching operation of a diode-end-pumped Nd:YLF laser, we use a Cr+:YAG crystal as a saturable absorber for the Nd3+ laser emission at 1.053 μm. At the maximum power of nearly 500 mW, the laser produces long-term stable pulse duration of 26 ns at 1.053μm with an energy of 22μJ. Meanwhile, the property of Nd:YVO4 laser with the same cavity configuration as the Nd:YLF laser is investigated, and the operation condition analized.

关 键 词：二极管泵浦 被动调Q 饱和吸收体 钕:YLF激光器 

分 类 号：TN248.1[电子电信—物理电子学] TN245