溅射Ga_2O_3反应自组装和脉冲激光沉积(PLD)法制备GaN薄膜  

THE INVESTIGATION OF GAN FILMS SYNTHESIZED THROUGH REACTIVELY RECONSTRUCTING Ga_2O_3 FILMS SPUTTERED AND THE PULSED LASER DEPOSITION (PLD) METHODS

作　　者：伊长虹[1] 孙振翠[1] 刘玫[2] 张庆刚[2] 满宝元[2] 薛成山[2] 

机构地区：[1]山东交通学院数理学系,济南250023 [2]山东师范大学物理与电子科学学院,济南250014

出　　处：《山东师范大学学报（自然科学版）》2007年第4期55-57,共3页Journal of Shandong Normal University(Natural Science)

基　　金：教育部科技重点基金资助项目(206093);国家自然科学基金资助项目(10474059);山东交通学院科研基金资助项目(Z200503)

摘　　要：用溅射Ga2O3反应自组装和脉冲激光沉积(PLD)法分别在硅和蓝宝石衬底上制备CaN薄膜,用X射线衍射图谱(XRD)和原子力显微镜(AFM)对GaN薄膜的结构和形貌进行分析,结果表明,采用两种方法在两种衬底上均可制备出结晶较好的CaN薄膜,但硅衬底上制备的GaN薄膜的晶粒明显大于在蓝宝石衬底上制备的GaN薄膜的晶粒,进一步表明硅基溅射Ga2O3反应自组装GaN薄膜晶化程度较高.CaN thin films on Si and sapphire substrates have been synthesized through reactively reconstructing Ga2O3 films sputtered and the pulsed laser deposition（PLD）methods.X-ray diffraction（XRD）and atomic force microscopy（AFM）were employed to analyze the structure and surface morphology.The results show that both methods can prepare good CaN thin films on Si and sapphire substrates.However,the CaN grains on Si substrate are much larger than those on sapphire substrates,which shows we can obtain high quality GaN films synthesized through reactively reconstructing Ga2O3 films sputtered.

关 键 词：溅射Ga2O3反应自组装 脉冲激光沉积(PLD) CaN薄膜 

分 类 号：TN304[电子电信—物理电子学]