一种改进的BiCMOS工艺欠压锁存电路的设计  

Design of an Improved under Voltage Lock Out Circuit Based on BiCMOS Process

作　　者：王瑾[1] 田泽[1] 李攀[1] 周密[1] 刘力军[1] 唐宏震[1] 

机构地区：[1]西北大学信息科学与技术学院,陕西西安710127

出　　处：《现代电子技术》2007年第24期182-184,共3页Modern Electronics Technique

基　　金：西安-美国应用材料创新基金资助项目(ZX05097-XA-AM-200514)

摘　　要：针对DC-DC电源管理芯片中所必需的欠压锁存功能,利用带隙基准电压源的原理,提出一种新的改进的UV-LO(欠压锁存)电路的设计,实现了欠压锁存的阈值点和迟滞量,成功地实现了欠压锁存电路的预定功能。基于0.6μm BiC-MOS工艺,HSpice软件仿真的结果表明所设计的UVLO电路具有结构简单、温度漂移小、功耗低等特点,性能有很大改善,满足了芯片的需要。According to the need of essential Under Voltage Lock Out （UVLO） function in DC - DC power management chips, a new UVLO circuit based on bandgap reference voltage source is proposed, the threshold point and the hysteretic range are realized, under - voltage lockout function is successfully realized. The results of HSpice simulation based on 0, 6 /zm BiC- MOS process show that the new UVLO circuit has very low temperature draft,low power consumption. The performances of circuit are improved greatly, satisfies the need of chip.

关 键 词：欠压锁存 带隙基准 滞回区间 BICMOS 

分 类 号：TN432[电子电信—微电子学与固体电子学]