掺锗微结构光纤的非线性特性研究  

Study on Nonlinearity of Microstmcture Fiber with Germanium Doping in the Core Region

作　　者：孙婷婷[1] 王志[1] 开桂云[1] 袁树忠[1] 董孝义[1] 

机构地区：[1]南开大学现代光学研究所,天津300071

出　　处：《激光与红外》2007年第12期1311-1314,共4页Laser & Infrared

基　　金：国家"973"计划项目(2003CB314906);天津市自然科学基金项目(06YFJZJC00300)资助

摘　　要：由于二氧化锗材料的非线性折射率高于石英,因此可以通过在纤芯中掺杂二氧化锗来进一步提高纯硅微结构光纤的非线性系数。采用全矢量有限单元方法,本文理论计算和分析了纤芯掺杂微结构光纤的非线性系数、模场分布、色散等特性。结果表明,在几乎不影响模场分布和色散的情况下,光纤非线性系数得到了大幅提高。此外,还讨论了掺杂浓度和掺杂半径对光纤非线性系数的影响。Germanium doping in silica can enhance the effective nonlinear index of refraction, since it is not equal for GeO2 and SiO2. Properties of enhanced nonlinearity, effective mode area, and chromatic dispersion in microstructure fiber （MF） with a GeO2-doped core are theoretically investigated by using an all-vector finite element method. With little difference in mode field distribution compared to the pure silica situation, the nonlinearity of PCF is greatly enhanced by doping Ge in the core region. Further more, the effect of doping concentration and radius of doped area on fiber＇s nonlinearity is studied.

关 键 词：微结构光纤 非线性系数 掺锗 非线性折射率 

分 类 号：TN253[电子电信—物理电子学]