N型Bi_2Te_(2.5)Se_(0.5)热电薄膜的电阻率与膜厚和温度的关系(英文)  

Thickness and Temperature Dependence of Electrical Resistivity of n-type Bi_2Te_(2.5)Se_(0.5) Thermoelectric Thin Films

作　　者：段兴凯[1] 杨君友[1] 朱文[1] 肖承京[1] 

机构地区：[1]华中科技大学材料科学与工程学院材料成形与模具技术国家重点实验室,湖北武汉430074

出　　处：《材料科学与工程学报》2007年第6期867-870,共4页Journal of Materials Science and Engineering

基　　金：National Natural Science Foundation of China under Grant(50401008);the Specialized Prophasic Research Project of Key Basic Research Plan(2004CCA03200)of China.

摘　　要：在玻璃衬底上通过瞬间蒸发法沉积了厚度为50-400nm的N型Bi2Te2.5Se0.5热电薄膜,沉积温度为473K。采用XRD、EDXA和FESEM技术分别对薄膜的相结构、组成和表面形貌进行了分析研究,在300-350K的温度范围内,研究了薄膜的电阻率与膜厚和温度的相互关系。N-type Bi2Te2.5Se0.5 thermoelectric thin films with thickness in the range 50-400nm have been deposited by flash evaporation method on glass substrates at 473K, The structure, composition and morphology of the deposited thin films were carried out by X- ray diffraction （XRD）, energy-dispersive X-ray analysis （EDXA） and field emission scanning electron microscope （FE-SEM） respectively. The thickness and temperature dependence of electrical resistivity of the thin films were studied in the temperature range 300-350K.

关 键 词：电阻率 Bi2Te25Se0.5薄膜 瞬间蒸发法 

分 类 号：TN304[电子电信—物理电子学] TB304[一般工业技术—材料科学与工程]