Study of total ionizing dose radiation effects on enclosed gate transistors in a commercial CMOS technology  

作　　者：李冬梅 王志华 皇甫丽英 勾秋静 

机构地区：[1]Department of Electronic Engineering, Tsinghua University, Belting 100084, China [2]Institute of Microelectronics, Tsinghua University, Beijing 100084, China

出　　处：《Chinese Physics B》2007年第12期3760-3765,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China （Grant No 6037202/F010204）.

摘　　要：This paper studies the total ionizing dose radiation effects on MOS （metal-oxide-semiconductor） transistors with normal and enclosed gate layout in a standard commercial CMOS （compensate MOS） bulk process. The leakage current, threshold voltage shift, and transconductance of the devices were monitored before and after γ-ray irradiation. The parameters of the devices with different layout under different bias condition during irradiation at different total dose are investigated. The results show that the enclosed layout not only effectively eliminates the leakage but also improves the performance of threshold voltage and transconductance for NMOS （n-type channel MOS） transistors. The experimental results also indicate that analogue bias during irradiation is the worst case for enclosed gate NMOS. There is no evident different behaviour observed between normal PMOS （p-type channel MOS） transistors and enclosed gate PMOS transistors.This paper studies the total ionizing dose radiation effects on MOS （metal-oxide-semiconductor） transistors with normal and enclosed gate layout in a standard commercial CMOS （compensate MOS） bulk process. The leakage current, threshold voltage shift, and transconductance of the devices were monitored before and after γ-ray irradiation. The parameters of the devices with different layout under different bias condition during irradiation at different total dose are investigated. The results show that the enclosed layout not only effectively eliminates the leakage but also improves the performance of threshold voltage and transconductance for NMOS （n-type channel MOS） transistors. The experimental results also indicate that analogue bias during irradiation is the worst case for enclosed gate NMOS. There is no evident different behaviour observed between normal PMOS （p-type channel MOS） transistors and enclosed gate PMOS transistors.

关 键 词：MOS transistors radiation effects total dose layout 

分 类 号：O53[理学—等离子体物理]