大功率低功耗快速软恢复SiGeC功率开关二极管  

High-power low-loss fast and soft recovery SiGeC switching power diodes

作　　者：马丽[1] 高勇[2] 刘静[2] 王彩琳[2] 

机构地区：[1]西安理工大学应用物理系,西安710048 [2]西安理工大学电子工程系,西安710048

出　　处：《物理学报》2007年第12期7236-7241,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:50477012);高等学校博士学科点专项科研基金(批准号:20050700006);陕西省教育厅专项科研计划(批准号:05JK268)资助的课题.~~

摘　　要：为满足电力电子电路对功率开关二极管高频化的发展要求,提出了一种大功率低功耗快速软恢复p+(SiGeC)-n--n+异质结二极管.与常规的Sip-i-n二极管相比,在正向电流密度不超过1000A/cm2情况下,p+(SiGeC)-n--n+二极管的正向压降减少了约1/5,有效降低了器件的通态功耗;反向恢复时间缩短了一半多,反向峰值电流降低了约25%,软度因子提高了1.3倍,而反向阻断电压和反向漏电流基本不发生变化.研究发现,Ge和C的含量是影响p+(SiGeC)-n--n+二极管特性的重要参数,这为器件结构设计提供了更大的自由度.A high-power low-loss fast and soft recovery p^＋ （SiGeC）-n^--n^＋ heterojunction diode is presented to meet the need of higher frequency in power electron circuits. Compared with conventional Si p-i-n diodes, the forward voltage drop of p^＋ （SiGeC）-n^--n^＋ diodes is reduced by 20% when the operating current density does not exceed 1000 A/cm^2, which effectively reduces the operating loss. The reverse recovery characteristics of the novel SiGeC diodes are much improved. The reverse recovery time is more than half shorter, the peak reverse current is 25% lower and the softness factor is increased 1.3 times. Furthermore, the leakage current and reverse block voltage are almost unchanged. Ge and C content is the important parameters to affect the characteristics of p^＋ （SiGeC）-n^--n^＋ , which offers more freedom to device design.

关 键 词：快速软恢复 大功率低功耗 SiGeC/Si异质结功率二极管 

分 类 号：TN31[电子电信—物理电子学]