环形分布孔氧化物限制技术-VCSELs的新工艺  

Annulus Distributed Holes Method Oxide Confinement—A New VCSELs Processing

作　　者：杨凯[1] 钟景昌[1] 郝永芹[1] 晏长岭[1] 黄波[1] 

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,长春130022

出　　处：《长春理工大学学报（自然科学版）》2007年第4期23-26,共4页Journal of Changchun University of Science and Technology(Natural Science Edition)

基　　金：国家"十一五"计划项目(62301020203 60676025)

摘　　要：采用一种新工艺制备垂直腔面发射激光器阵列(VCSELs)的方法。用环形分布孔取代以往的环形沟道作为氧化物限制技术的注入窗口,孔的分布是由出光孔、侧向氧化深度和湿法腐蚀深度等因素决定的。经分析设计后孔的分布以十个孔最佳,分布孔之间是天然的电流注入通道解决了电极过沟断线问题。由瞬态热传导方程对阵列单元器件的热相互作用进行了理论分析。阵列中单元器件的出光孔径为400 m,在室温下连续输出光功率为0.6w,峰值波长为808nm。Vertical-cavity surface-emitting laser array （VCSEIs） is made by a new process. Ring trench is placed by annulus distributed holes as the lateral oxidation windows. The factors which decide the distribution of the holes include the aperture of the light out, the deptb of lateral oxidation, the depth of wet etching and so on. After analysis and optimized design, ten holes circled the aperture of light out are the best .Annulus distributed holes offers bridges for current injection the connecting Ti-Au metal between ohmic contact and bonding pad does not have to cross the ring trench and would not break. Through the analysis of the thermal interaction between individual elements in array devices, a simple theoretical model has been studied, and by using the transient thermal conduction function. This kind of thermal interaction has also been studied. Individual emitters with an oxidized aperture of 400μm in diameter demonstrate CW lasing at 808nm at room temperature, with a maximum output power of 0.6w.

关 键 词：垂直腔面发射激光器 激光器阵列 环形分布孔 氧化物限制技术 

分 类 号：TN248.4[电子电信—物理电子学]