Sn掺杂对锂铌钛体系微波介质陶瓷性能的影响  

EFFECT OF SnO_2 DOPING ON MCIROWAVE DIELECTRIC PROPERTIES OF LiNb_(0.6)Ti_(0.5)O_3 CERAMICS

作　　者：喻佑华[1] 丁银忠[1] 艾凡荣[1] 杨俊瑞[1] 王相惠[1] 

机构地区：[1]景德镇陶瓷学院材料科学与工程学院,景德镇333001

出　　处：《中国陶瓷》2007年第12期54-56,共3页China Ceramics

摘　　要：引入SnO_2对Li_2O-Nb_2O_5-TiO_2体系陶瓷进行掺杂改性研究,考察了SnO_2的添加量对LiNb_(0.5)Ti_(0.5-x)Sn_xO_3陶瓷的烧结性能、显微结构和微波介电性能的影响。研究表明:对所考察的体系而言,随着SnO_2添加量的增加,烧结样品体积密度和介电常数基本保持不变;而品质因数Qf值随SnO_2的加入有所提高,而后随SnO_2含量继续增加而快速下降;在1100℃的烧结温度下,当x=0.01时,获得微波介电性能优良的微波陶瓷,其ε_(?)=67.8,τ_(?)=+4ppm/℃,Qf=6780GHz。SnO2 was introduced into the LiNb0.6Ti0.5O3 microwave dielectric ceramics as dopant. The effect of the amount of SnO2 on sintering performances, microstructure and microwave dielectric properties in the LiNb0.6Ti0.5-xSn2O3 ceramics was investigated. The results indicate that for the specimens investigated, the bulk densities and dielectric constant remains steady when doping SnO2. The value of quality factor （Qf） increases with the initial doping of SnO2 but decrease quickly after more additives are introduced. The specimens with nice dielectric properties ε=67.8, T f=＋4ppm/U , Qf=6780GHz were obtained at a sintering temperature of 1100℃ for x=0.01.

关 键 词：微波介质陶瓷 锂铌钛体系 SnO2掺杂 介电性能 

分 类 号：TQ174.764[化学工程—陶瓷工业]