空位缺陷对高自旋极化材料Fe_3F_4磁电性能的影响  

Effect of vacant defects on magnetic and electric properties of Fe_3F_4

作　　者：孙雷[1] 董会宁[1] 刘俊[1] 李登峰[1] 

机构地区：[1]重庆邮电大学应用物理研究所,重庆400065

出　　处：《重庆邮电大学学报（自然科学版）》2007年第6期767-770,共4页Journal of Chongqing University of Posts and Telecommunications(Natural Science Edition)

基　　金：重庆市自然科学基金(CSTC2005BB4070);重庆市教委资助项目(KJ060515;KJ050502)

摘　　要：Fe3F4是一种高自旋极化材料,在自旋电子器件中具有广阔的应用前景。采用第一性原理赝势法计算了3种Fe空位缺陷对Fe3F4磁电性能(能态密度、电荷分布、分子磁矩等)的影响,并利用配位场理论分析了3种空位缺陷影响Fe3F4磁电性能的微观机理。Fe3F4 is a kind of highly spin-polarized material, which has much application probabilities in the spintronics. Effect of three kinds of Fe vacancy defects on magnetic and electric properties of Fe3F4 is calculated by using the first principal potentials. Based on the coordinate field theories, the microscopic mechanism of effect is analyzed.

关 键 词：Fe3F4 空位缺陷 磁电性能 自旋极化 

分 类 号：O614.811[理学—无机化学] O614.331[理学—化学]