全方位离子注入与沉积技术及其工业机的研制  

Development of a commercial facility of plasma immersion ion implantation and deposition

作　　者：王浪平[1] 王小峰[1] 汤宝寅[1] 

机构地区：[1]哈尔滨工业大学现代焊接生产技术国家重点实验室,哈尔滨150001

出　　处：《核技术》2007年第12期983-986,共4页Nuclear Techniques

摘　　要：全方位离子注入与沉积(Plasma immersion ion implantation and deposition,PIIID)技术发展到现在,已经逐步走向工业化应用。本文介绍了全方位离子注入与沉积技术的原理,探讨了全方位离子注入与沉积工业机应该具备的功能,介绍了研制成功的全方位离子注入与沉积设备的结构和实施效果,其脉冲阴极弧等离子体源沉积速率达到2.9(?)/s,IGBT固体开关调制器输出电压达到10 kV,能够一次处理多个工业零件。Plasma immersion ion implantation and deposition （PIIID） has been developed rapidly in recent years, and commercial applications of the technique have been realized. A PIIID facility for commercial applications was developed in our lab. In this paper, the principle and functions of the commercial PIIID facility is discussed. Deposition rate of the pulsed cathodic arc plasma source in the PIIID facility is up to 2.9A/s, and output voltage of the IGBT modulator is 10 kV. Industrial components in batches can be treated with the PIIID facility.

关 键 词：全方位离子注入与沉积 工业机 功能 

分 类 号：TG172.444[金属学及工艺—金属表面处理]