纳米CMOS集成电路设计技术和发展趋势  

Design and Development of Nano CMOS IC

作　　者：戴宇杰[1] 吕英杰[1] 张小兴[1] 

机构地区：[1]南开大学,天津300071

出　　处：《微纳电子技术》2007年第12期1031-1035,共5页Micronanoelectronic Technology

摘　　要：论述了日美等国纳米CMOS集成电路半导体制造工艺的现状和发展趋势,分析说明国外半导体制造技术的战略和发展状况;结合90 nm CMOS工艺设计的超大规模SOC芯片的实践,对纳米CMOS集成电路设计技术进行分析;阐述SOC设计面临的技术难题,并对今后的发展趋势进行了预测。The current situation and development of nanometer CMOS IC semiconductor manufacturing engineering in Japan, USA and other countries were investigated, and an analysis of the strategy, current technology situation of semiconductor manufacturing in these countries were made. The design technology of nano CMOS IC was illustrated, by implementing the 90 nm COMS ULS （ultra large scale） SOC. Finally, the technology problems of SOC designing were treated, and the development trend was forecast.

关 键 词：纳米CMOS集成电路 系统集成芯片 设计技术 发展趋势 

分 类 号：TN432[电子电信—微电子学与固体电子学]