Electronic packaging materials prepared by powder injecting molding and pressure infiltration process  

Electronic packaging materials prepared by powder injecting molding and pressure infiltration process

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作  者:YIN Fazhang GUO Hong JIA Chengchang XU Jun ZHANG Ximin ZHU Xuexin 

机构地区:[1]National Engineering and Technology Research Center for Nonferrous Metals Composites, Beijing General Research Institute for Nonferrous Metals, Beijing 100088, China [2]Materials Science and Engineering School, University of Science and Technology Beijing, Beijing 100083, China

出  处:《Rare Metals》2007年第6期625-629,共5页稀有金属(英文版)

基  金:the National Natural Science Foundation of China (No. 50274014).

摘  要:AlSiCp (65 vol.% SiC) electronic packaging materials were manufactured by powder injection molding (PIM) and pressure infiltration process in order to obtain near net-shaped parts. SiCp preformed compacts obtained by pre-sintering process at 1150 K have high strength and good appearance, and the ratio of open porosity to total porosity is nearly 98%. The relative density of composites is bigger than 99%. The thermal conductivity of A1SiCp composites fabricated by this method is 198 W·m^-1·K^-1, and the coefficient of thermal expansion (CTE) is 8.0 × 10^-6/K (298 K).AlSiCp (65 vol.% SiC) electronic packaging materials were manufactured by powder injection molding (PIM) and pressure infiltration process in order to obtain near net-shaped parts. SiCp preformed compacts obtained by pre-sintering process at 1150 K have high strength and good appearance, and the ratio of open porosity to total porosity is nearly 98%. The relative density of composites is bigger than 99%. The thermal conductivity of A1SiCp composites fabricated by this method is 198 W·m^-1·K^-1, and the coefficient of thermal expansion (CTE) is 8.0 × 10^-6/K (298 K).

关 键 词:COMPOSITES ALUMINUM microstructure thermal conductivity 

分 类 号:TG15[金属学及工艺—热处理]

 

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