高阻表面交指形电容设计公式的改进  

Revision of Inter-Digital Capacitance of High Impedance Ground Plane Design Formulas

作　　者：郑秋容[1] 李有权[1] 张辉[1] 袁乃昌[1] 

机构地区：[1]国防科学技术大学电子科学与工程学院

出　　处：《电子学报》2007年第12期2319-2323,共5页Acta Electronica Sinica

基　　金：国家973安全重大基础研究项目(No.51307)

摘　　要：本文采用保角变换法和电容拼接技术对交指形电容进行精确的计算,对交指形高阻表面光子晶体设计公式进行了改进.该计算模型适用于宽范围的介电常数和介质层厚度,各指长度和缝隙宽度可以不同,并且很容易扩展到多层介质以及有覆盖层的情况.设计了三个光子晶体例子,对其表面波特性进行了模拟和测试,得出交指电容值,证明本文给出的计算公式更准确.Conformal mapping-based method and partial capacitance method are given to accurately calculate inter-digital capacitance and the inter-digital high impedance ground plane （HIGP） design formulas are revised. The models are useful for a wide range of dielectric constants and layer thickness. Every finger length and spacing may be different; moreover, the derived formulas can easily extend to multi-layer dielectric including cover layer. Three samples of the inter-digital high impedance ground plane are manufactured and the surface wave propagating property of the inter-digital HIGP are simulated and tested to demonstrate the potential of the models.

关 键 词：高阻表面 保角变换法 交指形电容 表面波特性 

分 类 号：TN011[电子电信—物理电子学]