氧化亚铜纳米线的制备及其光电性能  

Preparation and photoelectricity of Cu_2O nanowires

作　　者：张卫国[1] 刘伟星[1] 李贺[1] 姚素薇[1] 

机构地区：[1]天津大学化工学院杉山表面技术实验室,天津300072

出　　处：《化工学报》2007年第12期3206-3209,共4页CIESC Journal

基　　金：国家自然科学基金项目(50271046);国家教育部博士点基金项目(20030056034)~~

摘　　要：Cu2O nanowires were successfully synthesized by an electrochemical method using alumina membrane as template.The composition and morphology of nanowires were characterized by using X-ray diffraction(XRD)and scanning electron microscopy(SEM).The photo-potential and electrochemical impedance spectroscopy experiments of Cu2O/AAO were also performed.The results showed that the diameter of the Cu2O nanowires was about 120 nm and their length was 2 μm.The photo-potential was about 25 mV and the electrochemical impedance of Cu2O/AAO was much smaller under the light of 365 nm.Cu2O nanowires were successfully synthesized by an electrochemical method using alumina membrane as template.The composition and morphology of nanowires were characterized by using X-ray diffraction（XRD）and scanning electron microscopy（SEM）.The photo-potential and electrochemical impedance spectroscopy experiments of Cu2O/AAO were also performed.The results showed that the diameter of the Cu2O nanowires was about 120 nm and their length was 2 μm.The photo-potential was about 25 mV and the electrochemical impedance of Cu2O/AAO was much smaller under the light of 365 nm.

关 键 词：CU2O 纳米线 光电压 交流阻抗 

分 类 号：O614.813[理学—无机化学] TQ153.43[理学—化学]