碳纳米管场发射阴极阵列制备研究与进展  

Study and Development of Preparation of Carbon Nanotube Field Emission Cathode Arrays

作　　者：杨云青[1] 王蜀霞[1] 胡慧君[1] 牛君杰[1] 饶早英[1] 耿晓菊[1] 

机构地区：[1]重庆大学数理学院应用物理系,重庆400044

出　　处：《材料导报》2007年第12期20-23,共4页Materials Reports

基　　金：重庆市自然科学基金计划项目(CSTC2006BB4018)

摘　　要：碳纳米管具有良好的电子发射特性,成为理想的场致发射阴极材料,碳纳米管阵列制备研究是碳纳米管平板显示应用的前提。介绍了碳纳米管阴极阵列制备技术如丝网印制法、CVD原位生长法、光刻法和自组织法等研究与进展,并从薄膜残留去除、CNTs膜微结构改变及sp^3缺陷增加等方面概述了目前CNTs场发射性能优化的进展,指出了目前存在的问题并作了简单分析。The screen printing technology has been improved to fabricate carbon nanotube field emission cathode,so materials the preparation research of carbon nanotubes arrays is key for applications in the field emission flat display. In this paper, the preparation methods of carbon nanotube field emission cathode arrays such as screen printing,CVD in situ growth, light-chisel, self-organize and so on are introduced and the development is also reviewed. The development of the optinization of CNTs field emission capability is summarized aiming at wiping off the leftover in film, changing CNTs micro-structure and enhancing spa lacuna. Some problems and solutions are proposed too.

关 键 词：碳纳米管阵列 场致发射 制备 

分 类 号：TB383[一般工业技术—材料科学与工程]