铜金属纳米线的制备及其图案化  

Synthesis and patterning of Cu nanowires

作　　者：周迪[1] 佘希林[1] 宋国君[1] 孙峋[1] 刘曦[1] 

机构地区：[1]青岛大学化学化工与环境学院,山东青岛266071

出　　处：《现代化工》2007年第12期42-44,共3页Modern Chemical Industry

摘　　要：采用电化学沉积法在孔径为200 nm的阳极氧化铝膜AAO模板中成功制备了Cu金属纳米线阵列、结合紫外线光刻法组装了图案化铜纳米线阵列。电化学沉积法可通过控制沉积时间来获得具有不同长径比的铜纳米线阵列;图案化的纳米线排列规整,高度有序;且纳米线组成的形状与掩膜相同。Cu nanowires are successfully prepared via electrochemical decomposition in the AAO membrane of a 200nm in aperture diameter. Besides, patterned Cu nanowires are fabricated by pholithography. By this method the depositing time can be controlled to get Cu nanowires with various length/diameter ratio, and the patterned nanowire arrays are highly arranged. The appearance is just the same with the photomask.

关 键 词：铜纳米线 电化学沉积法 图案化 AAO 

分 类 号：O614.121[理学—无机化学]