提高LED外量子效率  

Enhancement of The External Quantum Efficiency of Light-Emitting-Diodes

作　　者：占美琼[1] 吴中林[1] 吴恒莱[1] 陈林[1] 

机构地区：[1]上海第二工业大学,上海201209

出　　处：《激光与光电子学进展》2007年第12期61-67,共7页Laser & Optoelectronics Progress

基　　金：上海市浦东新区科技发展基金(PKJ2005-59)资助课题

摘　　要：提高发光二极管的发光效率是当前的一个研究热点。简要介绍了从芯片技术角度提高发光二极管(LED)外量子效率的几种途径,生长分布布拉格反射层结构、制作透明衬底、衬底剥离技术、倒装芯片技术、表面粗化技术、异形芯片技术、采用光子晶体结构等。此外还介绍了发光材料、能带结构以及工艺对外量子效率的影响。The research on improving the light-emitting efficiency of light-emitting-diodes is a hotspot. Several approaches to enhance the external quantum efficiency of LED are discussed, such as growth of distributed Bragg reflector （DBR） tabricat-ing, transparent substrates technology, surface lift-off, flip-chip, surface roughening, unusual chip and photonic crystal structure. The effects of lightemitting materials, energy gap and process condition on the external quantum efficiency are also discussed.

关 键 词：发光二极管 外量子效率 

分 类 号：TN312.8[电子电信—物理电子学]