一种新的单电子器件宏观模型  

A New Macro-model for Single Electron Devices

作　　者：许海霞[1] 

机构地区：[1]中山大学理工学院,广州510275

出　　处：《固体电子学研究与进展》2007年第4期440-444,共5页Research & Progress of SSE

摘　　要：提出了一种新的单电子器件宏观模型,利用该模型可以把单个单电子器件处理为一个常规电子元件,从而对满足一定条件的由许多单电子器件组成的复杂系统,可以采用通用集成电路模拟软件SPICE进行分析模拟,这比完全由Monte Carlo方法对整个系统进行模拟可节省几个数量级的计算时间。The paper presented a new macro-model for single-electron devices. With this macro-model a single electron transistor could be treated as a classical electronic element and then complex single electron circuits satisfying certain conditions could be analyzed using SPICE, a popular software for simulating of large scale integrated circuits. Compared with the method that analyzes a complex system as whole using Monte Carlo method, the macro-model method could save orders of CPU time.

关 键 词：宏观模型 单电子器件 SPICE模拟 

分 类 号：TN702[电子电信—电路与系统]