微波PIN二极管倍频器研究  

Study of Microwave PIN Diode Frequency Multiplier

作　　者：张永鸿[1] 唐小宏[1] 樊勇[1] 吴正德[1] 

机构地区：[1]电子科技大学电子工程学院,成都610054

出　　处：《固体电子学研究与进展》2007年第4期498-502,共5页Research & Progress of SSE

摘　　要：用理想的开关模型对反向并联PIN二极管对的输出频谱和倍频损耗进行分析,与混频二极管倍频器和变容二极管倍频器进行了比较,分析了PIN二极管的倍频机理。对微波PIN二极管倍频器进行了实验研究,得出了有益的结论。研制的S波段和C波段五倍频器倍频损耗分别达到15.4 dB和10.6 dB,而S波段的倍频源相位噪声达到—136 dBc/Hz@10 kHz,具有低噪声性能。By the on-off model of anti-parallel diodes, this paper describes the output current spectrum and conversion loss of PIN diode frequency multiplier, which is compared with the multipliers based on mixer diode and varactor diode. Then the principle of PIN diode multiplier is given. The microwave PIN diode multiplier is also studied by experiment, and some useful conclusions are gained. At the same time, a S-band X5 multiplier and a C-band X5 multiplier, with conversion loss 15.4dB and 10.6dB respectively, are presented. And the measured result shows that phase noise of the S-band multiplier oscillator is-136dBc/Hz@10kHz.

关 键 词：PIN二极管 倍频器 微波 相位噪声 

分 类 号：TN312.4[电子电信—物理电子学]