动态离子束混合沉积氧化钽薄膜的微观分析  

Microanalysis of tantalum oxide films deposited by dynamic ion beam mixing

作　　者：杜纪富[1] 展长勇[1] 黄宁康[1] 

机构地区：[1]辐照物理和技术教育部重点实验室,四川大学原子核科学技术研究所,成都610064

出　　处：《功能材料与器件学报》2007年第6期512-516,共5页Journal of Functional Materials and Devices

摘　　要：用动态离子束混合技术在铁基材料表面上制备氧化钽薄膜。用Ar^+束溅射沉积薄膜的同时,分别用100 keV,2×10^(17)/cm^2的O^+离子或100 keV,8×10^(16)/cm^2的Ar^+进行辐照。对两种工艺下生成的氧化钽薄膜进行了XPS、AES及RBS分析研究,结果发现,Ar^+辐照下制备的氧化物薄膜主要由符合化学剂量比的Ta_2O_5化合物组成,引入的碳污染少。O^+辐照下制备的薄膜生成了低价的氧化钽,引入了大量的碳污染。Tantalum oxide films were prepared on iron substrates by dynamic ion beam mixing where tantalum was deposited with Ar^＋ beam sputtering, and simultaneously bombarded by O^＋ beam with an energy of 100 keV and a dose of 2 × 10^17/cm^2 or bombarded by Ar^＋ beam with an energy of 100 keV and a dose of 8 × 10^16/cm^2. The prepared samples were investigated by XPS, AES and RBS. The results show that the oxide films fabricated by Ar^＋ beam bombardment are mainly Ta2O5. While the films fabricated by O^＋ beam bombardment consist of tantalum suboxides, and the films with O^＋ beam bombardment were contaminated by more carbon than those with Ar^＋ beam bombardment.

关 键 词：氧化钽薄膜 动态离子柬混合 XPS AES 

分 类 号：O484.1[理学—固体物理] O484.5[理学—物理]