掺杂浓度对中频反应磁控溅射制备Al_2O_3：Ce^(3+)薄膜发光性能的影响  

Effect of Ce^(3+)concentration on luminescent properties of Al_2O_3:Ce^(3+)films by medium frequency reactive magnetron sputtering

作　　者：廖国进[1,2] 巴德纯[1] 闻立时[3] 刘斯明[4] 阎绍峰[2] 

机构地区：[1]东北大学机械工程与自动化学院 [2]辽宁工学院机械工程与自动化学院,锦州121001 [3]中国科学院金属研究所表面工程部 [4]北京航空航天大学机械工程与自动化学院

出　　处：《功能材料与器件学报》2007年第6期543-548,共6页Journal of Functional Materials and Devices

基　　金：国家自然科学基金资助项目(No.50376067)

摘　　要：应用中频反应磁控溅射设备在载玻片上制备掺铈的Al_2O_3薄膜,在固定的电源功率下,氩气流量为23sccm,氧流量为5sccm,室温下溅射时间为90min的条件下,通过控制薄膜中的Ce^(3+)离子的掺杂量来改变薄膜的发光性能。通过X光能量散射谱(EDS)和光致发光测量,得到发光强度和发光峰位对薄膜中的Ce^(3+)浓度有强烈的依赖关系,并且分析了产生这种关系的原因;对发光激发谱分析表明,薄膜发光是源于薄膜中形成的氯化铈集合体中的Ce^(3+)。Al_2O_3:Ce^(3+)发光膜可应用于需要蓝光发射的平板显示领域.Aluminum oxide film doped with cerium was deposited by the medium frequency reactive magnetron sputtering technique, under the deposition condition of constant power, 30 minutes duration, Ar and 02 flow of 23 and 5 sccm, the relationship of luminescent properties of Al2O3 ： Ce^3＋ films with the amount of Ce^3＋ incorporated in the films was studied. The presence of Ce^3＋ and the stoichiometry of these films have been determined by energy dispersive x - ray spectroscope （EDS） measurements. It is observed that the total luminescence intensity increases and the peak sits strongly depends on the cerium concentration in the films. And served light emission generated the reason for the dependence was analyzed. It is proposed that the obby luminescent center is associated with cerium chloride molecular rather than atomic cerium impurities. The crystalline structure of the sample was analysed by x - ray diffractometry （XRD）. This luminescence feature has an advantage in display techniques that require a purer blue emission.

关 键 词：三氧化二铝薄膜 中频反应磁控溅射 掺杂浓度 光致发光 CE 

分 类 号：TB43[一般工业技术]