掺杂SnS薄膜的制备及电学性能  

Electrical properties of doped SnS thin films prepared by vacuum evaporation

作　　者：郭余英[1] 史伟民[1] 魏光普[1] 邱永华[1] 夏义本[1] 

机构地区：[1]上海大学材料科学与工程学院电子信息材料系,上海200072

出　　处：《功能材料与器件学报》2007年第6期651-654,共4页Journal of Functional Materials and Devices

基　　金：上海市科委重点项目(No.03DZ12033);AM基金资助项目(06SA08);上海市科委资助项目(06ZR14035);上海市重点学科资助(T0101)

摘　　要：硫化锡(SnS)具有很高的光吸收系数和合适的禁带宽度,又无毒性,因此在太阳电池等光电器件中具有潜在应用价值。本文用真空蒸发法制备掺杂的SnS薄膜,掺杂源有Sb、Sb_2O_3、Se、Te、In、In_2O_3、Se和In_2O_3的混合物。对各种掺杂SnS薄膜的厚度、电流-电压(Ⅰ—Ⅴ)特性等进行了表征,并计算了其电阻率和光电导与暗电导的比值(G_(photo)/G_(dark))。结果表明较有效的掺杂源是Sb,Sb掺杂的薄膜电阻率比纯薄膜的电阻率降低四个数量级,G_(photo)/G_(dark)增加约一倍。同时,研究了Sb掺杂量对SnS薄膜电学性能的影响,表明Sb的最佳掺入量约为1.3wt%～1.5wt%。Tin sulfide （ SnS has received much attention because of its high absorption coefficient, suitable band - gap and little toxicity. The resistivity of pure - SnS thin film deposited by vacuum evaporation is too high to make solar cell. In order to solve this problem, doped - SnS thin films were fabricated. Sb, Sb203, Se, Te, In, In2O3 , Se and In2O3 were used as dopant sources. The thickness and conductance of various doped - SnS thin films were measured, and then the resistivities and the ratio of photo - conductivity to dark - conductivity （ Gphoto/Gdark ） of these films were calculated. From the experimental resuits, Sb is the best dopant source. The resistivity of Sb doped - SnS thin film is reduced by four orders of magnitude and the value of Gphoto/Gdark is double. In addition, the influence of Sb doping content on the electrical properties of doped - SnS thin films was also investigated, and the optimum doping content of Sb is 1.3% - 1.5% in weight.

关 键 词：硫化锡 太阳电池 掺杂 真空蒸发 电阻率 

分 类 号：TN304[电子电信—物理电子学]