ZnTe：Cu多晶薄膜结构和电性质(英文)  

Structure and electrical properties of ZnTe:Cu polycrystalline thin films

作　　者：吴晓丽[1] 郑家贵[1] 郝瑞英[1] 冯良桓[1] 蔡伟[1] 蔡亚平[1] 张静全[1] 黎兵[1] 李卫[1] 武莉莉[1] 

机构地区：[1]四川大学材料科学与工程学院,成都610064

出　　处：《功能材料与器件学报》2007年第6期655-660,共6页Journal of Functional Materials and Devices

基　　金：National High Technology Research and Development Program of China(No. 2003AA513010);Ph.D.Programs Foundation of Ministry of Education of China(No.20050610024);Applied Basic Research Programs Foundation of Sichuan Province(No.2006J13-083)

摘　　要：用共蒸发法在室温下制备了ZnTe:Cu多晶薄膜,利用XRD、AFM和XPS等测试技术对样品进行了表征,研究了掺Cu浓度和退火温度对薄膜物相和晶粒度的影响,分析了薄膜表面的元素状态。根据铜离子的变价行为对异常的电阻率温度关系作了解释。并确定了最佳掺铜浓度和退火温度。ZnTe：Cu polycrystalline thin films prepared by vacuum co -evaporation technique were characterized by X - ray Diffraction （ XRD）, Atomic Force Microscope （AFM） and X - ray Photoelectron Spectroscope （XPS） measurements. The impact of copper - doping concentration and annealing temperature upon structure and surface morphology of ZnTe： Cu thin films were studied and elements existent states were analyzed. The abnormal ρ ～ T curve was explained based on changes of copper ions valence. And the optimum copper- doped concentration and annealing temperature were determined.

关 键 词：ZnTe:Cu多晶薄膜 共蒸发系统 结构 电阻率~温度 

分 类 号：O484[理学—固体物理]